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IGN1011L1200

In Stock: 15
IGN1011L1200 - Integra Technologies Inc. - Transistors - FETs, MOSFETs - RF
REF: IGN1011L1200 Integra Technologies Inc.
IGN1011L1200

Integra Technologies Inc.

GAN, RF POWER TRANSISTOR, L-BAND

IGN1011L1200 is a Transistors - FETs, MOSFETs - RF manufactured by Integra Technologies Inc.. GAN, RF POWER TRANSISTOR, L-BAND. Key specifications: voltage - rated 180 V, package / case PL84A1, current - test 160 mA, power - output 1250W.

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In Stock: 15

Specifications

12 parameters
Product StatusActive
Transistor TypeHEMT
Frequency1.03GHz ~ 1.09GHz
Gain16.8dB
Voltage - Test50 V
Current Rating (Amps)-
Noise Figure-
Current - Test160 mA
Power - Output1250W
Voltage - Rated180 V
Package / CasePL84A1
Supplier Device PackagePL84A1

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