SPW11N60S5 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: SPW11N60S5 Infineon Technologies
SPW11N60S5

Infineon Technologies

N-CHANNEL POWER MOSFET

SPW11N60S5 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 15,052

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id5.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1460 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

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