SPP80N06S2L-H5 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: SPP80N06S2L-H5 Infineon Technologies
SPP80N06S2L-H5

Infineon Technologies

MOSFET N-CH 55V 80A TO220-3

SPP80N06S2L-H5 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 55V 80A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

In Stock: 3,691

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs190 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6640 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

Need a Quote for SPP80N06S2L-H5?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →