Name: SPP21N50C3HKSA1
Brand: Infineon Technologies
SKU: SPP21N50C3HKSA1
Availability: InStock

REF: SPP21N50C3HKSA1 Infineon Technologies

SPP21N50C3HKSA1

MOSFET N-CH 560V 21A TO220-3

SPP21N50C3HKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 560V 21A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 3,533

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	560 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3