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SPP20N60S5XKSA1

In Stock: 8,866
SPP20N60S5XKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: SPP20N60S5XKSA1 Infineon Technologies
SPP20N60S5XKSA1

Infineon Technologies

HIGH POWER_LEGACY

SPP20N60S5XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. HIGH POWER_LEGACY. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 8,866

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 13A, 10V
Vgs(th) (Max) @ Id5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs103 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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