SPI35N10 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: SPI35N10 Infineon Technologies
SPI35N10

Infineon Technologies

MOSFET N-CH 100V 35A TO262-3

SPI35N10 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 35A TO262-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

In Stock: 3,699

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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