Name: SPI11N60C3HKSA1
Brand: Infineon Technologies
SKU: SPI11N60C3HKSA1
Availability: InStock

REF: SPI11N60C3HKSA1 Infineon Technologies

SPI11N60C3HKSA1

MOSFET N-CH 600V 11A TO262-3

SPI11N60C3HKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 11A TO262-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

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In Stock: 8,614

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA