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PTAB182002TCV2R250XTMA1

In Stock: 1,550
PTAB182002TCV2R250XTMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - RF
REF: PTAB182002TCV2R250XTMA1 Infineon Technologies
PTAB182002TCV2R250XTMA1

Infineon Technologies

IC RF FET LDMOS 190W H-49248H-4

PTAB182002TCV2R250XTMA1 is a Transistors - FETs, MOSFETs - RF manufactured by Infineon Technologies. IC RF FET LDMOS 190W H-49248H-4. Key specifications: voltage - rated 65 V, package / case H-49248H-4, current rating (amps) 10µA, power - output 29W.

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In Stock: 1,550

Specifications

12 parameters
Product StatusObsolete
Transistor TypeLDMOS
Frequency1.805GHz ~ 1.88GHz
Gain14.8dB
Voltage - Test28 V
Current Rating (Amps)10µA
Noise Figure-
Current - Test520 mA
Power - Output29W
Voltage - Rated65 V
Package / CaseH-49248H-4
Supplier Device PackageH-49248H-4

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