Name: ISS55EP06LMXTSA1
Brand: Infineon Technologies
SKU: ISS55EP06LMXTSA1
Price: 0.45 USD
Availability: InStock

REF: ISS55EP06LMXTSA1 Infineon Technologies

ISS55EP06LMXTSA1

Infineon Technologies

MOSFET P-CH 60V 180MA SOT23-3

ISS55EP06LMXTSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 60V 180MA SOT23-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

Datasheet Request a Quote

In Stock: 68,141

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.5Ohm @ 180mA, 10V
Vgs(th) (Max) @ Id	2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs	0.59 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	18 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	400mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT23-3-5
Package / Case	TO-236-3, SC-59, SOT-23-3