ISP650P06NMXTSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: ISP650P06NMXTSA1 Infineon Technologies
ISP650P06NMXTSA1

Infineon Technologies

MOSFET P-CH 60V 3.7A SOT223-4

ISP650P06NMXTSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 60V 3.7A SOT223-4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

In Stock: 9,691

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id4V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 30 V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 4.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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