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ISP26DP06NMSATMA1

In Stock: 5,906
ISP26DP06NMSATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: ISP26DP06NMSATMA1 Infineon Technologies
ISP26DP06NMSATMA1

Infineon Technologies

MOSFET P-CH 60V SOT223

ISP26DP06NMSATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 60V SOT223. Key specifications: mounting type Surface Mount, package / case TO-261-4, TO-261AA.

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In Stock: 5,906

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseTO-261-4, TO-261AA

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