Name: ISP25DP06NMXTSA1
Brand: Infineon Technologies
SKU: ISP25DP06NMXTSA1
Price: 0.44 USD
Availability: InStock

REF: ISP25DP06NMXTSA1 Infineon Technologies

ISP25DP06NMXTSA1

Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223-4

ISP25DP06NMXTSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 60V 1.9A SOT223-4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 1,068

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	10.8 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	420 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 4.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA