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ISC230N10NM6ATMA1

In Stock: 8,913
ISC230N10NM6ATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: ISC230N10NM6ATMA1 Infineon Technologies
ISC230N10NM6ATMA1

Infineon Technologies

TRENCH >=100V PG-TDSON-9

ISC230N10NM6ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-TDSON-9. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 8,913

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C7.7A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds690 pF @ 50 V
FET Feature-
Power Dissipation (Max)3W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8 FL
Package / Case8-PowerTDFN

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