Name: ISC080N10NM6ATMA1
Brand: Infineon Technologies
SKU: ISC080N10NM6ATMA1
Price: 2.03 USD
Availability: InStock

REF: ISC080N10NM6ATMA1 Infineon Technologies

ISC080N10NM6ATMA1

Infineon Technologies

TRENCH >=100V PG-TDSON-8

ISC080N10NM6ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-TDSON-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 5,099

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	8.05mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8 FL
Package / Case	8-PowerTDFN