ISC0806NLSATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: ISC0806NLSATMA1 Infineon Technologies
ISC0806NLSATMA1

Infineon Technologies

TRENCH >=100V PG-TDSON-8

ISC0806NLSATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-TDSON-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 8,407

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.3V @ 61µA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 50 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-7
Package / Case8-PowerTDFN

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