Name: IRLL024NPBF-INF
Brand: Infineon Technologies
SKU: IRLL024NPBF-INF
Availability: InStock

REF: IRLL024NPBF-INF Infineon Technologies

IRLL024NPBF-INF

HEXFET POWER MOSFET

IRLL024NPBF-INF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. HEXFET POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 8,484

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.6 nC @ 5 V

Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA