Name: IRL2203NPBF-INF
Brand: Infineon Technologies
SKU: IRL2203NPBF-INF
Availability: InStock

REF: IRL2203NPBF-INF Infineon Technologies

IRL2203NPBF-INF

HEXFET POWER MOSFET

IRL2203NPBF-INF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. HEXFET POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

Request a Quote

In Stock: 4,229

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 4.5 V

Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3290 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	180W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3