IRFU9N20D - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IRFU9N20D Infineon Technologies
IRFU9N20D

Infineon Technologies

MOSFET N-CH 200V 9.4A IPAK

IRFU9N20D is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 9.4A IPAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 2,009

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds560 pF @ 25 V
FET Feature-
Power Dissipation (Max)86W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251AA)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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