Name: IRFS4410PBF-INF
Brand: Infineon Technologies
SKU: IRFS4410PBF-INF
Availability: InStock

REF: IRFS4410PBF-INF Infineon Technologies

IRFS4410PBF-INF

HEXFET POWER MOSFET

IRFS4410PBF-INF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. HEXFET POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 4,040

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	10mOhm @ 58A, 10V
Vgs(th) (Max) @ Id	4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5150 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB