Name: IRFR1018EPBF-INF
Brand: Infineon Technologies
SKU: IRFR1018EPBF-INF
Availability: InStock

REF: IRFR1018EPBF-INF Infineon Technologies

IRFR1018EPBF-INF

HEXFET POWER MOSFET

IRFR1018EPBF-INF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. HEXFET POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

Request a Quote

In Stock: 3,385

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2290 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63