IRFH5110TRPBF - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IRFH5110TRPBF Infineon Technologies
IRFH5110TRPBF

Infineon Technologies

MOSFET N-CH 100V 11A/63A 8PQFN

IRFH5110TRPBF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 11A/63A 8PQFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

In Stock: 5,867

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3152 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerVDFN

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