IRFH5110TR2PBF - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IRFH5110TR2PBF Infineon Technologies
IRFH5110TR2PBF

Infineon Technologies

MOSFET N-CH 100V 5X6 PQFN

IRFH5110TR2PBF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 5X6 PQFN. Key specifications: mounting type Surface Mount, package / case 8-PowerVDFN.

In Stock: 2,467

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds3152 pF @ 25 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerVDFN

Need a Quote for IRFH5110TR2PBF?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →