IRFB4229PBF - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IRFB4229PBF Infineon Technologies
IRFB4229PBF

Infineon Technologies

MOSFET N-CH 250V 46A TO220AB

IRFB4229PBF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 250V 46A TO220AB. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-220-3.

In Stock: 6,338

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs46mOhm @ 26A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4560 pF @ 25 V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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