IRF7665S2TR1PBF - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IRF7665S2TR1PBF Infineon Technologies
IRF7665S2TR1PBF

Infineon Technologies

MOSFET N-CH 100V 4.1A DIRECTFET

IRF7665S2TR1PBF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 4.1A DIRECTFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case DirectFET™ Isometric SB.

In Stock: 6,497

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C4.1A (Ta), 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs62mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds515 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET SB
Package / CaseDirectFET™ Isometric SB

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