Name: IRF6662TR1PBF
Brand: Infineon Technologies
SKU: IRF6662TR1PBF
Availability: InStock

REF: IRF6662TR1PBF Infineon Technologies

IRF6662TR1PBF

MOSFET N-CH 100V 8.3A DIRECTFET

IRF6662TR1PBF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 8.3A DIRECTFET. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case DirectFET™ Isometric MZ.

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In Stock: 6,053

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	22mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id	4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1360 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ MZ
Package / Case	DirectFET™ Isometric MZ