Name: IRF5806
Brand: Infineon Technologies
SKU: IRF5806
Availability: InStock

REF: IRF5806 Infineon Technologies

IRF5806

MOSFET P-CH 20V 4A MICRO6

IRF5806 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 20V 4A MICRO6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

Datasheet Request a Quote

In Stock: 2,263

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	86mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.4 nC @ 4.5 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	594 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Micro6™(TSOP-6)
Package / Case	SOT-23-6 Thin, TSOT-23-6