Name: IRF1310NSPBF-INF
Brand: Infineon Technologies
SKU: IRF1310NSPBF-INF
Availability: InStock

REF: IRF1310NSPBF-INF Infineon Technologies

IRF1310NSPBF-INF

HEXFET POWER MOSFET

IRF1310NSPBF-INF is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. HEXFET POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 2,613

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 160W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB