DIODE GEN PURP 1.2KV 200A DIE
IRD3CH101DB6 is a Diodes - Rectifiers - Single manufactured by Infineon Technologies. DIODE GEN PURP 1.2KV 200A DIE. Key specifications: mounting type Surface Mount, package / case Die.
In Stock: 2,726
| Product Status | Obsolete |
|---|---|
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 200A |
| Voltage - Forward (Vf) (Max) @ If | 2.7 V @ 200 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 360 ns |
| Current - Reverse Leakage @ Vr | 3.6 µA @ 1200 V |
|---|---|
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 175°C |
Vishay General Semiconductor - Diodes Division
RS1J-E3/61T
0.50000
RFQ
NXP USA Inc.
PMEG1201AESFC315
0.04000
RFQ
Taiwan Semiconductor Corporation
1N4005G A0G
0.40000
RFQ
NTE Electronics, Inc
NTE558
1.90000
RFQ
Vishay General Semiconductor - Diodes Division
V2PM10L-M3/H
0.44000
RFQ
Diotec Semiconductor
S5D
0.16160
RFQ
Submit your RFQ and get a quote within 24 hours.
