Name: IQE065N10NM5CGATMA1
Brand: Infineon Technologies
SKU: IQE065N10NM5CGATMA1
Price: 3.35 USD
Availability: InStock

REF: IQE065N10NM5CGATMA1 Infineon Technologies

IQE065N10NM5CGATMA1

Infineon Technologies

TRENCH >=100V PG-TTFN-9

IQE065N10NM5CGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-TTFN-9. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 4,023

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.8V @ 48µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	PG-TTFN-9-1
Package / Case	8-PowerTDFN