Name: IPW65R190C6
Brand: Infineon Technologies
SKU: IPW65R190C6
Availability: InStock

REF: IPW65R190C6 Infineon Technologies

IPW65R190C6

N-CHANNEL POWER MOSFET

IPW65R190C6 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

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In Stock: 6,289

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id	3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1620 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	151W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3