Name: IPW65R110CFDFKSA2
Brand: Infineon Technologies
SKU: IPW65R110CFDFKSA2
Price: 6.30 USD
Availability: InStock

REF: IPW65R110CFDFKSA2 Infineon Technologies

IPW65R110CFDFKSA2

Infineon Technologies

MOSFET N-CH 650V 31.2A TO247-3

IPW65R110CFDFKSA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 31.2A TO247-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

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In Stock: 9,802

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs	118 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	277.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3