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IPW65R099C6FKSA1

In Stock: 1,208
IPW65R099C6FKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPW65R099C6FKSA1 Infineon Technologies
IPW65R099C6FKSA1

Infineon Technologies

MOSFET N-CH 650V 38A TO247-3

IPW65R099C6FKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 38A TO247-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

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In Stock: 1,208

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs127 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2780 pF @ 100 V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-1
Package / CaseTO-247-3

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