IPW65R095C7XKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPW65R095C7XKSA1 Infineon Technologies
IPW65R095C7XKSA1

Infineon Technologies

MOSFET N-CH 650V 24A TO247

IPW65R095C7XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 24A TO247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 700

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2140 pF @ 400 V
FET Feature-
Power Dissipation (Max)128W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-1
Package / CaseTO-247-3

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