Name: IPW65R019C7
Brand: Infineon Technologies
SKU: IPW65R019C7
Availability: InStock

REF: IPW65R019C7 Infineon Technologies

IPW65R019C7

75A, 650V, 0.019OHM, N-CHANNEL M

IPW65R019C7 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. 75A, 650V, 0.019OHM, N-CHANNEL M. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

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In Stock: 6,912

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	19mOhm @ 58.3A, 10V
Vgs(th) (Max) @ Id	4V @ 2.92mA
Gate Charge (Qg) (Max) @ Vgs	215 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9900 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	446W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3