Name: IPW60R099CP
Brand: Infineon Technologies
SKU: IPW60R099CP
Availability: InStock

REF: IPW60R099CP Infineon Technologies

IPW60R099CP

MOSFET N-CH 600V 31A TO247-3-1

IPW60R099CP is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 31A TO247-3-1. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

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In Stock: 6,026

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	255W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3