IPW60R045P7XKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPW60R045P7XKSA1 Infineon Technologies
IPW60R045P7XKSA1

Infineon Technologies

MOSFET N-CH 650V 61A TO247-3-41

IPW60R045P7XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 61A TO247-3-41. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 6,931

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs45mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id4V @ 1.08mA
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3891 pF @ 400 V
FET Feature-
Power Dissipation (Max)201W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-41
Package / CaseTO-247-3

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