IPW60R041C6FKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPW60R041C6FKSA1 Infineon Technologies
IPW60R041C6FKSA1

Infineon Technologies

MOSFET N-CH 600V 77.5A TO247-3

IPW60R041C6FKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 77.5A TO247-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 5,369

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C77.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs41mOhm @ 44.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs290 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6530 pF @ 10 V
FET Feature-
Power Dissipation (Max)481W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-1
Package / CaseTO-247-3

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