Name: IPW50R199CP
Brand: Infineon Technologies
SKU: IPW50R199CP
Availability: InStock

REF: IPW50R199CP Infineon Technologies

IPW50R199CP

N-CHANNEL POWER MOSFET

IPW50R199CP is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

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In Stock: 4,806

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	139W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3