Name: IPW50R190CE
Brand: Infineon Technologies
SKU: IPW50R190CE
Availability: InStock

REF: IPW50R190CE Infineon Technologies

IPW50R190CE

N-CHANNEL POWER MOSFET

IPW50R190CE is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

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In Stock: 4,886

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	24.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Rds On (Max) @ Id, Vgs	190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id	3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs	47.2 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1137 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	152W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3