Name: IPU80R2K8CEBKMA1
Brand: Infineon Technologies
SKU: IPU80R2K8CEBKMA1
Availability: InStock

REF: IPU80R2K8CEBKMA1 Infineon Technologies

IPU80R2K8CEBKMA1

MOSFET N-CH 800V 1.9A TO251-3

IPU80R2K8CEBKMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 800V 1.9A TO251-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

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In Stock: 9,132

Specifications

17 parameters

Product Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA