IPU78CN10N G - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPU78CN10N G Infineon Technologies
IPU78CN10N G

Infineon Technologies

MOSFET N-CH 100V 13A TO251-3

IPU78CN10N G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 13A TO251-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 4,742

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs78mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds716 pF @ 50 V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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