IPU60R1K5CEAKMA2 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPU60R1K5CEAKMA2 Infineon Technologies
IPU60R1K5CEAKMA2

Infineon Technologies

MOSFET N-CH 600V 3.1A TO251-3

IPU60R1K5CEAKMA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 3.1A TO251-3. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 7,607

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs9.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 100 V
FET Feature-
Power Dissipation (Max)49W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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