Name: IPU50R1K4CEBKMA1
Brand: Infineon Technologies
SKU: IPU50R1K4CEBKMA1
Availability: InStock

REF: IPU50R1K4CEBKMA1 Infineon Technologies

IPU50R1K4CEBKMA1

MOSFET N-CH 500V 3.1A TO251-3

IPU50R1K4CEBKMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 500V 3.1A TO251-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

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In Stock: 4,939

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id	3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	178 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA