Name: IPTG111N20NM3FDATMA1
Brand: Infineon Technologies
SKU: IPTG111N20NM3FDATMA1
Price: 9.50 USD
Availability: InStock

REF: IPTG111N20NM3FDATMA1 Infineon Technologies

IPTG111N20NM3FDATMA1

Infineon Technologies

TRENCH >=100V PG-HSOG-8

IPTG111N20NM3FDATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-HSOG-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSMD, Gull Wing.

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In Stock: 1,795

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	10.8A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id	4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7000 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOG-8-1
Package / Case	8-PowerSMD, Gull Wing