Name: IPTG018N10NM5ATMA1
Brand: Infineon Technologies
SKU: IPTG018N10NM5ATMA1
Price: 4.44 USD
Availability: InStock

REF: IPTG018N10NM5ATMA1 Infineon Technologies

IPTG018N10NM5ATMA1

Infineon Technologies

TRENCH >=100V PG-HSOG-8

IPTG018N10NM5ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-HSOG-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSFN.

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In Stock: 4,245

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	32A (Ta), 273A Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.8mOhm @ 150A, 10V
Vgs(th) (Max) @ Id	3.8V @ 202µA
Gate Charge (Qg) (Max) @ Vgs	152 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 273W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOG-8-1
Package / Case	8-PowerSFN