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IPT65R195G7XTMA1

In Stock: 1,732
IPT65R195G7XTMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPT65R195G7XTMA1 Infineon Technologies
IPT65R195G7XTMA1

Infineon Technologies

MOSFET N-CH 650V 14A 8HSOF

IPT65R195G7XTMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 14A 8HSOF. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerSFN.

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In Stock: 1,732

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs195mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds996 pF @ 400 V
FET Feature-
Power Dissipation (Max)97W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-2
Package / Case8-PowerSFN

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