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IPT65R099CFD7XTMA1

In Stock: 2,967
IPT65R099CFD7XTMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPT65R099CFD7XTMA1 Infineon Technologies
IPT65R099CFD7XTMA1

Infineon Technologies

MOSFET N-CH 650V 8HSOF

IPT65R099CFD7XTMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 8HSOF. Key specifications: mounting type Surface Mount, package / case 8-PowerSFN.

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In Stock: 2,967

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageTOLL
Package / Case8-PowerSFN

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