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IPT111N20NFDATMA1

In Stock: 6,574
IPT111N20NFDATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPT111N20NFDATMA1 Infineon Technologies
IPT111N20NFDATMA1

Infineon Technologies

MOSFET N-CH 200V 96A 8HSOF

IPT111N20NFDATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 96A 8HSOF. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSFN.

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In Stock: 6,574

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7000 pF @ 100 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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