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IPT039N15N5ATMA1

In Stock: 5,030
IPT039N15N5ATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPT039N15N5ATMA1 Infineon Technologies
IPT039N15N5ATMA1

Infineon Technologies

OPTIMOS 5 POWER MOSFET

IPT039N15N5ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. OPTIMOS 5 POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSFN.

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In Stock: 5,030

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs3.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4.6V @ 257µA
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7700 pF @ 75 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 319W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8
Package / Case8-PowerSFN

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