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IPT030N12N3GATMA1

In Stock: 6,985
IPT030N12N3GATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPT030N12N3GATMA1 Infineon Technologies
IPT030N12N3GATMA1

Infineon Technologies

TRENCH >=100V

IPT030N12N3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSFN.

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In Stock: 6,985

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 237A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs198 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13000 pF @ 60 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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